>> Publications
>> Journals
2011
* Dinc T., Zihir S., Tasdemir F., and Gurbuz Y., "A Fully Integrated, Highly Linear CMOS T/R Switch for X-Band Radar Systems," IEEE Journal, 2011 (submitted).
* Zihir S., Tasdemir F., and Gurbuz Y., "A New LC Tank Circuit for 2.45 GHz Linearly Tunable VCO," Transactions on Microwave Theory and Technology, 2011 (submitted).
* Dinc T., Zihir S., Tasdemir F., and Gurbuz Y., " A DC to 20 GHz 0.25-µm CMOS SPDT Switch," IEEE Microwave and Wireless Components Letters, 2011 (submitted).
* Dinc T., Zihir S., Kalyoncu I., and Gurbuz Y., "An X-Band, High Performance, SiGe-HBT LNA for Phased Array Radar Applications," Microwaves, Antennas & Propagation, IET, 2011 (submitted).
* Zihir S., Dinc T., and Gurbuz Y., "Higher Efficiency and Compact X-Band SiGe Power Amplifier for Phased Array Radar Applications," Microwaves, Antennas & Propagation, IET, 2011 (submitted).
* Zihir S., Tasdemir F., and Gurbuz Y., "A New LC Tank Circuit for 2.45 GHz Linearly Tunable VCO," Transactions on Microwave Theory and Technology, 2011 (submitted).
* Dinc T., Zihir S., Tasdemir F., and Gurbuz Y., " A DC to 20 GHz 0.25-µm CMOS SPDT Switch," IEEE Microwave and Wireless Components Letters, 2011 (submitted).
* Dinc T., Zihir S., Kalyoncu I., and Gurbuz Y., "An X-Band, High Performance, SiGe-HBT LNA for Phased Array Radar Applications," Microwaves, Antennas & Propagation, IET, 2011 (submitted).
* Zihir S., Dinc T., and Gurbuz Y., "Higher Efficiency and Compact X-Band SiGe Power Amplifier for Phased Array Radar Applications," Microwaves, Antennas & Propagation, IET, 2011 (submitted).
2010
* Dinc T., Zihir S., and Gurbuz Y., "A CMOS SPDT T/R Switch for X-Band on Chip Radar Applications," Electronics Letters, vol. 46 no. 20, 2010.
* M. Kaynak, I. Tekin and Y. Gurbuz, "Realization of a Single-Chip, SiGe:C-Based Power Amplifier for Multi-Band WiMAX Applications, " IET Microwaves, Antennas & Propagation, Mar., 2010.
* M. Kaynak, I. Tekin and Y. Gurbuz, "A Fully Integrated Low-Power SiGe Power Amplifier for Biomedical Applications, " IET Microwaves, Antennas & Propagation, Feb., 2010.
* M. Kaynak, I. Tekin and Y. Gurbuz, "Realization of a Single-Chip, SiGe:C-Based Power Amplifier for Multi-Band WiMAX Applications, " IET Microwaves, Antennas & Propagation, Mar., 2010.
* M. Kaynak, I. Tekin and Y. Gurbuz, "A Fully Integrated Low-Power SiGe Power Amplifier for Biomedical Applications, " IET Microwaves, Antennas & Propagation, Feb., 2010.
2009
* E. Kaymaksüt, Y. Gurbuz, and I. Tekin, "Matching Wilkinson Power Dividers in 0.35 um SiGe BiCMOS Technology, " Microwaves and Optical Technology Letters, vol. 51, issue. 6, pp. 434-442, Mar. 2009.
* E. Kaymaksüt, Y. Gurbuz, and I. Tekin, " Impedance Matching Wilkinson Power Dividers in 0.35 um SiGe BiCMOS Technology, " Microwaves and Optical Technology Letters, vol. 51, issue. 3, pp. 681-685, Mar. 2009.
* A. K. Bakkaloglu, Y. Gurbuz, and I. Tekin, "Design of a tunable multi-band differential LC VCO using 0.35 um SiGe BiCMOS technology for multi-standard wireless communication systems, " Microelectronics Journal, vol. 40, issue. 6, pp. 983-990, Jun. 2009.
* M. Kaynak, M. Uzunkol, Y. Gurbuz, and I. Tekin, "Performance Comparison of a Single and Multiband Power Amplifiers Using IHP 0.25 mu m SiGe HBT Technology, " International Journal of RF and Microwave Computer-Aided Enginering, vol. 19, issue. 4, pp. 434-442, Jul. 2009.
* E. Kaymaksüt, Y. Gurbuz, and I. Tekin, " Impedance Matching Wilkinson Power Dividers in 0.35 um SiGe BiCMOS Technology, " Microwaves and Optical Technology Letters, vol. 51, issue. 3, pp. 681-685, Mar. 2009.
* A. K. Bakkaloglu, Y. Gurbuz, and I. Tekin, "Design of a tunable multi-band differential LC VCO using 0.35 um SiGe BiCMOS technology for multi-standard wireless communication systems, " Microelectronics Journal, vol. 40, issue. 6, pp. 983-990, Jun. 2009.
* M. Kaynak, M. Uzunkol, Y. Gurbuz, and I. Tekin, "Performance Comparison of a Single and Multiband Power Amplifiers Using IHP 0.25 mu m SiGe HBT Technology, " International Journal of RF and Microwave Computer-Aided Enginering, vol. 19, issue. 4, pp. 434-442, Jul. 2009.
2008
* E. Heves, I. Tekin, and Y. Gurbuz, "A MEM-varactor tuned, 7.8 GHz differential LC voltage-controlled oscillator, " Sensors and Actuators A- Physical, vol. 144, issue. 2, pp. 296-303, Jun. 2008.
* O. Esame, I. Tekin, and Y. Gurbuz, "Realization of a VCO for WLAN applications using 0.35 um-SiGe BiCMOS technology, " Int. Journ. of RF and Microwave Computer-Aided Enginering, vol. 18, issue. 5, pp. 485-495, Sep. 2008.
* O. Esame, I. Tekin, and Y. Gurbuz, "Realization of a VCO for WLAN applications using 0.35 um-SiGe BiCMOS technology, " Int. Journ. of RF and Microwave Computer-Aided Enginering, vol. 18, issue. 5, pp. 485-495, Sep. 2008.
2007
* O. Esame, I. Tekin, A. Bozkurt, and Y. Gurbuz, "Design of a 4.2-5.4 GHz Differential LC VCO Using 0.35 um SiGe BiCMOS Technology for IEEE 802.11a Applications, " Int. Journ. of RF and Microwave Computer-Aided Enginering, vol. 17, issue. 2, pp. 243-251, Mar. 2007.
* C. Kavlak, Y. Gurbuz, and I. Tekin, "A coplanar waveguide on-chip RF choke for WLAN RF circuits, " Microwave and Optical Technology Letters, vol. 49, issue. 10, pp. 2530-2534, Oct. 2007.
* C. Kavlak, Y. Gurbuz, and I. Tekin, "A coplanar waveguide on-chip RF choke for WLAN RF circuits, " Microwave and Optical Technology Letters, vol. 49, issue. 10, pp. 2530-2534, Oct. 2007.
2006
2005
* Y. Gurbuz, O. Esame, I. Tekin, "Diamond Semiconductor Technology for RF Device Applications, " Solid-State Electronics, vol. 49, pp. 1055-1070, 2005.
* Y. Gurbuz, T. F. Bechteler, M. Parlak and A. Bozkurt, "An Analytical Design Methodology for Microelectromechanical (MEM) Filters using Equivalent Circuits, " Sensors and Actuators A: Physical, vol. 119, pp. 38-47, 2005.
* Y. Gurbuz, T. F. Bechteler, M. Parlak and A. Bozkurt, "An Analytical Design Methodology for Microelectromechanical (MEM) Filters using Equivalent Circuits, " Sensors and Actuators A: Physical, vol. 119, pp. 38-47, 2005.
2004
* O. Esame, Y. Gurbuz, I. Tekin, and A. Bozkurt, "Performance Comparison of State-of-the-Art Heterojunction Bipolar Devices (HBT) based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP, " Microelectronics Journal, vol. 35, no. 11, pp. 901-908, 2004.
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